101. In current commutated DC-DC choppers, the voltage spike appears across the load when
102. In EMCsignal, the source delivers maximum power to the input of transmissionline when the transmission line input impedance
103. In radiative coupling, the emitter radiation field
104. In single phase VSI, the harmonic which is not present is
105. LISN is a device used to measure conducted emissions. LISN stands for
106. Power electronics essentially deals with control of a.c. power at …………
107. Silicon controlled rectifier can be turned on
108. Single phase VSI are mainly used in
109. The advantage of using free – wheeling diode in half controlled bridge converter is that
110. The conduction losses in IGBT is
111. The device that does not have the gate terminal is ……………….
112. The device that exhibits negative resistance region is ………………..
113. The effects of EMI can be reduced by
114. The input current waveform of a bridge controlled rectifier when the load is perfectly filtered is
115. The most suited gate pulses given to the AC regulator with R – L load can be in the form of
116. The normal way to turn on a diac is by ………………..
117. The output power of the cascaded amplifier-attenuator system can be determined using
118. The power MOSFET device is a
119. The square wave operation of 3 phase VSI lines contains the harmonics. The amplitudes are
120. The switching function of semiconductor devices can be characterized with
121. The triac is …………….
122. The UJT may be used as ……………….
123. The V-I characteristics for a triac in the first and third quadrants are essentially identical to those of ………………. in its first quadrant
124. To turn on UJT, the forward bias on the emitter diode should be …………… the peak point voltage
125. TRIAC is a semiconductor power electronic device which contains
126. Under harmonic free load voltages, the 3 phase VSI
127. Unipolar modulation is generally used in
128. Very large values of modulation index (greater than 3.24 lead to)
129. Voltage commutation circuit can be converted into a current commutation by interchanging the positions of
130. When a UJT is turned ON, the resistance between emitter terminal and lower base terminal …………….
131. When the emitter terminal of a UJT is open, the resistance between the base terminal is generally ………………..
132. When the temperature increases, the inter-base resistance (RBB) of a UJT ………….
133. When the temperature increases, the intrinsic stand off ratio ……….
134. Which of the following is not a characteristic of UJT?
135. With increase in firing angle
136. A Diac is a ................. switch
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